| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which crystal defects or metal impurities in the surface and the surface layer of a semiconductor are decreased. SOLUTION: A p-type silicon single crystal wafer is grown through, Czochralski method. It has a low resistivity of less than 0.1Ω/cm by doping it heavily with boron. The p-type silicon single crystal wafer is subjected to a heat treatment at a temperature of more than 1,000 degrees centigrade in an argon a atmosphere. By this step, the COP density in the p-type silicon single-crystal wafer is lowered. The BMD densities of the surface and the surface layer thereof are lowered. The BMD density of the inside thereof is mode high.
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