发明名称 FORMATION OF ZINC OXIDE THIN FILM, PRODUCTION OF SEMICONDUCTOR DEVICE SUBSTRATE USING THE SAME, AND PRODUCTION OF PHOTOVOLTAIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a zinc oxide thin film by electrodeposition from an aq. soln. capable of preventing the deposition of film on the rear face of a substrate. SOLUTION: An electrode 214 for preventing the deposition of film on the rear face is provided in an aq. soln. 202 contg. zinc ion, and a current is applied so that the relation between each of the potentials is counter electrode 204 > substrate 203 > electrode 214. When the method is applied to a solar cell preparing process, the short-circuit current density of the solar cell and the conversion efficiency are increased, and further the yield characteristic and durability are improved.
申请公布号 JPH11286799(A) 申请公布日期 1999.10.19
申请号 JP19990011291 申请日期 1999.01.20
申请人 CANON INC 发明人 SONODA YUICHI
分类号 H01L31/04;C25D5/02;C25D7/06;C25D9/04;H01L31/0392;H01L31/075;H01L31/18;H01L31/20 主分类号 H01L31/04
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