发明名称 |
FORMATION OF ZINC OXIDE THIN FILM, PRODUCTION OF SEMICONDUCTOR DEVICE SUBSTRATE USING THE SAME, AND PRODUCTION OF PHOTOVOLTAIC ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a zinc oxide thin film by electrodeposition from an aq. soln. capable of preventing the deposition of film on the rear face of a substrate. SOLUTION: An electrode 214 for preventing the deposition of film on the rear face is provided in an aq. soln. 202 contg. zinc ion, and a current is applied so that the relation between each of the potentials is counter electrode 204 > substrate 203 > electrode 214. When the method is applied to a solar cell preparing process, the short-circuit current density of the solar cell and the conversion efficiency are increased, and further the yield characteristic and durability are improved. |
申请公布号 |
JPH11286799(A) |
申请公布日期 |
1999.10.19 |
申请号 |
JP19990011291 |
申请日期 |
1999.01.20 |
申请人 |
CANON INC |
发明人 |
SONODA YUICHI |
分类号 |
H01L31/04;C25D5/02;C25D7/06;C25D9/04;H01L31/0392;H01L31/075;H01L31/18;H01L31/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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