发明名称 |
Electrostatic protection structure for MOS circuits |
摘要 |
An ESD protection circuit includes a pair of NPN lateral transistors electrically connected in series with the emitter of one of the transistors electrically connected to the collector of the other transistor. The bases of the two transistors are electrically connected together and are floating. The two transistors may be provided by two MOS transistors having N-type source and drains and P-type channel regions. The channels regions are connected together and are floating.
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申请公布号 |
US5969923(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970892933 |
申请日期 |
1997.07.15 |
申请人 |
SARNOFF CORPORATION;SHARP K.K. |
发明人 |
AVERY, LESLIE RONALD |
分类号 |
H01L27/04;H01L21/822;H01L27/02;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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