发明名称 PRECURSOR SOLUTION FOR FORMING THIN FERROELECTRIC FILM AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a process for producing a precursor solution which can form a coating fluid which, when used to form a thin ferroelectric film by the sol-gel method, can form a thin film having such a thickness as to exhibit its characteristics not by a multi-layer coating operation but by a single coating operation. SOLUTION: A Ti alkoxide oligomer having a cyclic or ladder structure is synthesized by the hydrolytic polycondensation of a Ti alkoxide. A Zr alkoxide oligomer is synthesized by the hydrolytic polycondensation of a Zr alkoxide, the Ti alkoxide oligomer is pre-hydrolyzed, and the hydrolyzate is reacted with a Zr alkoxide oligomer to obtain a Ti-O-Zr precursor. The Ti-O-Zr precursor is reacted with a Pb alkoxide to obtain a Pb(Ti-O-Zr) precursor.
申请公布号 JPH11286653(A) 申请公布日期 1999.10.19
申请号 JP19980105484 申请日期 1998.03.31
申请人 KANSAI SHINGIJUTSU KENKYUSHO:KK 发明人 AIZAWA MAMORU
分类号 C04B35/49;C04B35/491;C07F7/24;C07F7/28;C08G79/14;C09D185/00;C09K3/00;C23C18/12;G11B5/62;H01B3/00;H01B3/12;H01L21/02 主分类号 C04B35/49
代理机构 代理人
主权项
地址