| 摘要 |
A process for forming coatings and films from a gaseous reactant onto a semiconductor device is disclosed. The process includes preheating a gas to a temperature so that the gas will immediately react with the semiconductor wafer. After being preheated, the gas is contacted with the wafer under controlled conditions in order to form a uniform film. For instance, in one embodiment, a gas containing dinitrogen oxide is preheated until the dinitrogen oxide disassociates into nitric oxide. The nitric oxide is then contacted with the wafer to form an oxide coating. In an alternative embodiment, gaseous hydrogen and oxygen are preheated to a temperature sufficient to form steam, which subsequently chemically reacts with the wafer.
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