| 摘要 |
A power source noise suppressing type semiconductor device has: a semiconductor chip formed therein with a first circuit and a second circuit, the semiconductor chip having a plurality of pads on the surface thereof, the pads including at least a first circuit pad electrically connected to the first circuit and a second circuit pad electrically connected to the second circuit; a plurality of leads including at least one power source lead, each of the plurality of leads having an inner lead and an outer lead; and a plurality of bonding wires for electrically connecting the pad to the inner lead of the lead, the first circuit pad being connected to a first connection point of the inner lead of the power source lead by a bonding wire, the second circuit pad being connected to a second connection point of the inner lead of the power source lead by a bonding wire, and the first and second connection points being spaced apart by a distance which allows the mutual inductance between the first and second connection points of the inner lead of the power source lead to become smaller than a self-inductance of the outer lead of the power source lead.
|
