发明名称 SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF
摘要 A method for making a semiconductor, without using a vacuum pump or vacuum chamber, using corona discharge, which comprises the steps or: supplying a reactive gas to, at least, one electrode capable of generating corona discharge above a substrate with an RF power source under the atmosphere; irradiating ions or radicals resulted from the decomposition of said reactive gas by said corona discharge to said substrate; allowing said ions or radicals to be chemically reacted with said substrate or be diffused in said substrate.
申请公布号 KR960000190(B1) 申请公布日期 1996.01.03
申请号 KR19920020949 申请日期 1992.11.09
申请人 LG ELECTRONICS CO., LTD. 发明人 AHN, BYUNG - CHOL
分类号 H01L21/205;C23C16/06;C23C16/24;C23C16/34;C23C16/40;C23C16/44;C23C16/455;C23C16/505;C23C16/509;H01L21/203;H01L21/223;H01L21/265;H01L21/285;H01L21/30;H01L21/306;H01L21/3065;H01L21/31;H01L21/311;H01L21/316;H01L21/318;(IPC1-7):H01L21/265 主分类号 H01L21/205
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