FLASH MEMORY IN WHICH OPERATION OF MEMORY CELL IS PERFORMED IN SECTOR UNIT

摘要

PROBLEM TO BE SOLVED: To provide a flash memory in which an area of layout can be reduced by decreasing the number of word line decoders coupled to a word line. SOLUTION: A memory cell array is divided into plural sectors 11, this divided sector 11 is divided into sub-sectors 200, 300 of two or more again. Then, an internal word line W/L1 inside the sub-sector 200 is commonly coupled to an internal word line W/L2 inside the other sub-sector 300, and plural word lines W/L1, W/L2 can be commonly coupled to one word line decoder 21.