THE STRUCTURE OF A MOS TRANSISTOR,申请号KR19960026099-传众专利搜索

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发明名称	THE STRUCTURE OF A MOS TRANSISTOR
摘要
申请公布号	KR100223917(B1)	申请公布日期	1999.10.15
申请号	KR19960026099	申请日期	1996.06.29
申请人	HYUNDAI MICRO ELECTRONICS CO.,LTD.	发明人	YOO, YOUNG-JOON
分类号	H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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