| 摘要 |
PROBLEM TO BE SOLVED: To obtain a producing method of a grating element having high coupling efficiency by which an interface grating can be produced with good accuracy. SOLUTION: In this producing method, a SiO2 film 16' is formed in the film thickness corresponding to the height of a desired grating (first thermal oxidation process). Then the SiO2 film 16' is patterned into a desired grating pattern by reactive ion etching. Then a SiO2 film 15 having the film thickness corresponding to the desired optical buffer layer is formed on the silicon substrate 10 (second thermal oxidation process). Thereby, a grating 16 is produced on the SiO2 film 15. Then ZnO is sputtered on the SiO2 film 15 to form the optical waveguide layer 20. |
