| 摘要 |
<p>A projection exposure apparatus comprises an illumination optical system (3) for illuminating a mask (4) on which a pattern is formed and a projection optical system (7) for forming the image of the pattern on a work (8) based on radiation from the mask. The illumination optical system supplies illumination light with a center wavelength of below 180 nm, and the projection optical system has at least one concave mirror, at most 15 refraction lens, and at least 4 aspherical surfaces.</p> |
