摘要 |
<p>Disclosed is a plasma CVD apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a substrate (33), comprising a reaction vessel (31) in which the substrate (33) is arranged, means for introducing a reactant gas into the reaction vessel (31) and for discharging the waste gas from within the reaction vessel (31), a ladder-shaped electrode (32), i.e., a ladder antenna electrode or a ladder-shaped planar coil electrode, housed in the reaction vessel (31) for generating a glow discharge, and a power source (36) for supplying electric power to the ladder-shaped electrode (32) to permit the ladder-shaped electrode (32) to generate a glow discharge, wherein a power supply line joining the ladder-shaped electrode (32) and the power source (36) is formed of a coaxial cable, and the ladder-shaped electrode (32) is not connected to the ground via a ground wire. <IMAGE></p> |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
MURATA, MASAYOSHI;TAKEUCHI, YOSHIAKI;SERIZAWA, SATORU;NAWATA, YOSHIKAZU;OGAWA, KAZUHIKO |