发明名称 Plasma CVD apparatus
摘要 <p>Disclosed is a plasma CVD apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a substrate (33), comprising a reaction vessel (31) in which the substrate (33) is arranged, means for introducing a reactant gas into the reaction vessel (31) and for discharging the waste gas from within the reaction vessel (31), a ladder-shaped electrode (32), i.e., a ladder antenna electrode or a ladder-shaped planar coil electrode, housed in the reaction vessel (31) for generating a glow discharge, and a power source (36) for supplying electric power to the ladder-shaped electrode (32) to permit the ladder-shaped electrode (32) to generate a glow discharge, wherein a power supply line joining the ladder-shaped electrode (32) and the power source (36) is formed of a coaxial cable, and the ladder-shaped electrode (32) is not connected to the ground via a ground wire. &lt;IMAGE&gt;</p>
申请公布号 EP0949352(A1) 申请公布日期 1999.10.13
申请号 EP19990102642 申请日期 1999.02.12
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 MURATA, MASAYOSHI;TAKEUCHI, YOSHIAKI;SERIZAWA, SATORU;NAWATA, YOSHIKAZU;OGAWA, KAZUHIKO
分类号 C23C16/509;H01J37/32;(IPC1-7):C23C16/50 主分类号 C23C16/509
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