发明名称 Variable latency memory circuit
摘要 A memory integrated circuit includes a memory cell array, data lines 211 for transferring data to and from the memory cell array, data storage circuitry 200 coupled between the memory cell array and the data lines, and programmable circuitry 202, 206, 208 coupled to the data storage circuitry and responsive to control inputs and a clock signal for releasing data in the data storage circuitry. In further embodiments, the data storage circuitry includes a latch and the programmable circuitry includes circuitry for counting a predetermined number of cycles of the clock signal prior to releasing data in the data storage circuitry. The integrated circuit may also include circuitry 302 for transferring data to or from said array in a burst comprising a plurality of data bits.
申请公布号 US5966343(A) 申请公布日期 1999.10.12
申请号 US19970996522 申请日期 1997.12.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 THURSTON, PAULETTE
分类号 G06F12/00;G11C7/10;G11C7/22;G11C8/18;G11C11/407;(IPC1-7):G11C8/00 主分类号 G06F12/00
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