| 摘要 |
An FeRAM array replaces ROM, PROM, EPROM, and/or EEPROM in a programmable controlling device and thus provides non-volatile memory cells for code stores, data stores, registers (including peripheral registers), state machines and microcode (if included) in the device. The programmable controlling device contains a processor and non-volatile ferroelectric memory cells as well as a ferroelectric memory array. The array has a code store that holds a program to control the processor, a data store that stores temporary data from the processor, and one or more registers that hold data being manipulated by the processor. The code store, data store and registers are memory mapped onto the non-volatile ferroelectric memory array. The state machines and peripheral registers are made of ferroelectric memory cells. The programmable controlling device may also include microcode that cooperates with the processor to change the function of the processor. The microcode is memory mapped onto the nonvolatile ferroelectric memory cell array. |
