| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology wherein a capacitor with a sufficient capacity is realized in a limited flat area. SOLUTION: A titanium nitride film 56 constitutes a lower part electrode 60, which is etched to form a irregularity 80 on its surface for a larger surface area. An upper part electrode 62 is formed on the lower part electrode 60 through a capacity insulating film comprising a tantalic oxide film 61 of large permittivity, constituting a capacitor (information-accumulation capacity element) C. |
