ROW DECODER OF FLASH MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a row decoder of a flash memory device for realizing high integration density and shortening pumping time of positive or negative high potential. SOLUTION: This device comprises many global row decoders for generating a first control signal (GWLP) and a second control signal (GWLN) and many local decoders for selecting a word line selection signal responding to the first and second control signals. Each global row decoder responds to the first address (XAPREDk) from a predecoder to output a first voltage level (VPPGX) corresponding to the first control signal from a first power supply end and also responds to the second control signal (XBOPREDm) from a predecoder to output a second voltage level (VEEGX) corresponding to the second control signal from a second power supply end, and each local row decoder outputs a third voltage level (VEEXy) from a third power supply end generates a fourth voltage level from a fourth power supply end to receive an input of the second address (XCPREDn) from a predecoder.