NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a memory which can freely set an erasing block size. SOLUTION: A memory cell array 11 is formed of 128 blocks BLKO to BLK127 and each block has a size (one page×number of serial cells) of 128 kbits (8 kbits×16 cells). At the time of erasing the data, at least one block is selected by row decoders 12-0, 12-1,..., 12-12. A control gate driver 14 gives, at the time of data erasing, the predetermined potential (0 V) to a part of the word lines among a plurality of word lines at least in the selected one block. Thereby, data is erased only for the memory cells connected to a part of the word lines.