| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a fluorine compound produced in an etch back process is sufficiently removed. SOLUTION: A fluorine compound 28 produced in an etch back process is removed with H2 O plasma particles. Further, in a plasma cleaning process a contact layer 20 is heated, so that besides the plasma cleaning, the heat releases the fluorine compound. This arrangement makes it possible to sufficiently remove the fluorine compound 28 produced in the etch back process, thereby improving the quality. Moreover, in the plasma cleaning process, the contact layer in heated so as to omit a conventional annealing (heating) process. Consequently, the manufacturing process can be simplified. |
