| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a reticle pattern can be designed to satisfy both the accuracy of a formed pattern and the throughput. SOLUTION: One layer 1 of a semiconductor chip is divided into small regions 2, having small dimensions which are nearly equal to the spreading area of the back-scattered light of a transfer electron beam, and the area of a pattern in each small area 2 is calculated. When the difference between the largest and smallest values among the area ratios exceeds 25%, a reticle pattern is designed so as to perform post-transfer proximate effect correction on a wafer. When the difference is 15-25%, the pattern is designed to perform post-transfer proximate effect correction on the wafer for critical layers or to locally change the pattern dimension of the reticle for noncritical layers. When the difference is less than 15%, no correction is made for non-critical layers, or a correction is made by locally changing the pattern dimension of the reticle for noncritical layers. |
