| 摘要 |
<p>PROBLEM TO BE SOLVED: To stabilize the characteristics of substrates having a semiconductor thin film formed thereon, by subjecting the substrates to a steam anneal process while locating the substrates in a reaction furnace, supplying a first gas into the reaction furnace, and subjecting the substrates to a dry annealing process thereafter while supplying a second gas into the reaction furnace. SOLUTION: A plurality of silicon substrates 3 are set on a quartz glass boat 2 at a predetermined position in a reaction furnace 1, and are subjected to a steam anneal process while having a process tube 1 filled with a steam gas and keeping that condition for a predetermined time interval. By operating a supply gas switching value, N2 gas is fed into a gas supply tube 4, thereby driving out the steam gas within the tube 1 and having the tube 1 filled with the N2 gas and keeping that condition for a predetermined time interval to thereby subject the substrates 3 to a dry anneal process. By effecting the dry anneal process after the steam anneal process is finished, mists adsorbed onto the surfaces of the substrates are removed, thereby reducing surface leaks. As a result, the characteristics of the substrates can be stabilized.</p> |
