| 摘要 |
The semiconductor device having a multilayer gate type transistor constituting memory, comprises a P-type semiconductor substrate, a source formed by diffusing an N-type impurity on a surface of the semiconductor substrate to a first depth, an N-type drain, electrically separated from the source and formed on a surface of the semiconductor substrate, a first insulating film formed on a surface of a channel region between the source and the drain, a first gate electrode formed on a surface of the first insulating film, a second insulating film formed on a surface of the first gate electrode, and a second gate electrode on the second insulating film. The semiconductor device further comprises a source wiring region, which is connected to the source of the multilayer gate transistor and formed by diffusing the N-type impurity in the semiconductor substrate to a second depth shallower than the first depth.
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