| 摘要 |
An auto mode selector for a semiconductor memory device having a reference voltage selection switching circuit connected between a reference voltage pin and an internal reference voltage terminal, for selecting one of CTT and LVTTL in response to a reference voltage selection signal. The auto mode selector further includes an input leakage current controller for allowing current to flow through a resistor between a supply voltage source and the reference voltage pin only for a predetermined time period in response to an input leakage current control signal from an input leakage current control signal generator. According to the present invention, the amount of input leakage current and standby current can be reduced.
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