发明名称 |
Metal semiconductor optical device |
摘要 |
The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energy state occurring between the metal thin film and the semiconductor, to thereby enhance the optical absorption efficiency of light beam. The interface single atomic layer is formed by one of the group V elements, e.g., one of antimony(Sb) or arsenic(As). Additionally, the metal thin film has a thickness of approximately 30 ANGSTROM .
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申请公布号 |
US5961741(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19970842867 |
申请日期 |
1997.04.17 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK, KANG-HO;HA, JEONG-SOOK |
分类号 |
H01L31/04;H01L31/07;H01L31/108;(IPC1-7):H01L31/06;H01L27/095 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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