| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve a data reading speed when reading a data, and also method for reading a data is provided CONSTITUTION: A semiconductor memory device includes n memory cell array blocks(10-1...10-n), k sense amplifiers(12-11...12-n2) of n groups, k main buffers(60-1...60-k), k data outputting buffers(18-1..18-k) and a data outputting buffer controlling signal generator. The k sense amplifiers amplify each of k output data pairs being outputted from the memory cell array blocks in response to a sense amplifier controlling signal and output to k main data line pairs. The main buffers reset the main data line pairs in response to a main buffer controlling signal, respectively generate data of k complementary levels when each data of the k main data line pairs is moved to a complementary level, and generate k data pairs being reset after a predetermined time. The data outputting buffers input, buffer and output the k data pairs being generated from each of the k main buffers, in response to a data output buffer controlling signal. The data outputting buffer controlling signal generator generates the data output buffer controlling signal which becomes 'enable' in response to a control signal and data of data pairs outputted from the k main buffers is moved to a complementary level to become 'disable' after a predetermined time.
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