摘要 |
In an optical memory of phase transition type such that information is recorded or erased by reversibly changing the phase of a thin recording film between equilibrium phase and non-equilibrium phase in response to a laser beam, the memory is formed with a recording film comprising as the main component an intermetallic compound with a melting point between 300 DEG to 800 DEG C. in accordance with a binary target co-sputtering technique. Since the phase transition temperature of the recording film is higher than room temperatures, the recorded film can stably be kept in non-equilibrium phase state for a long time. Further, since the melting point thereof is lower than 800 DEG C., it is possible to record or erase information in or from the medium in response to a relatively small power laser beam. |