| 摘要 |
<p>A method is provided for nondestructive measurement of minority carrier diffusion (Lp) length and accordingly minority carrier lifetime (Óp) in a semiconductor device. The method includes the steps of: reverse biasing a semiconductor device under test, scanning a focused beam of radiant energy along a length of the semiconductor device, detecting current induced in the DUT by the beam as it passes point-by-point along a length of the DUT, detecting current induced in the semiconductor device by the beam as it passes point-by-point along the scanned length of the semiconductor device to generate a signal waveform (Isignal), and determining from the Isignal waveform minority carrier diffusion length (Lp) and/or minority carrier lifetime (Óp) in the semiconductor device. <IMAGE></p> |
