Fabrication of a network of interconnections using a non-porous filler material of low dielectric constant to fill the open porosity in the dielectric layers to prevent diffusion

摘要

A method for the fabrication of a network of interconnections by the deposition of an interconnection metal (10) is characterised in that, prior to the deposition of the interconnection metal, a filler material (8) is deposited in some drains (6) formed in at least one layer (3, 5) of dielectric material in a manner that fills the open porosity (7) of the dielectric material. This filler material is destined to prevent the subsequent diffusion of the interconnection metal and/or of a diffusion barrier metal (9), the filler material being non-porous and with a low dielectric constant. An Independent claim is also included for a semiconductor device incorporating a network of interconnections produced by this method.