| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the CMP of Cu/Ta laminated structure, and at the same time to obtain Cu wiring having superior bonding properties with on underlying layer. SOLUTION: An insulating film 2 with an opening is formed on a substrate 1, a titanium film 3 and a tantalum film 4 are laminated on the opening for forming a barrier film, and a copper wiring 5 is formed for collectively polishing and removing the copper wiring 5 and a barrier layer which consists of the titanium film 3 and the tantalum film 4 in one CMP process, thus shortening the process and improving the bonding properties between the substrate and the barrier film. |
