发明名称 LOW DIELECTRIC CONSTANT INSULATING MATERIAL FOR WIRING CIRCUIT AND ELECTRONIC PARTS USING THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a low dielectric constant insulating material for wiring circuit of fine patterns by including an insulating resin base and compounds which us obtained from chemical modification of a fullerence or a carbon nano- tube. SOLUTION: This material comprises (A) an insulating resin base (polyimide, silicone resin and the like) and (B) the compounds obtained by chemically modifying the fullerene (hollow spheroidal molecular compounds having carbon network structure on the surface) or the carbon nano-tube (hollow cylindrical molecular compounds having carbon network structure on the surface), with compounds including silicone based functional groups, or substituents including oxygen [-Si(CH3 )3 or -Si(CH3 )2 OCH3 or the like]. For forming space contributing to the reduction of the dielectric constant of the insulating material, the fullerenes or the like, preferably have angstrom or more of carbon-carbon distance of the molecular longitudinal axis of the fullerenes (C20 or C30 fullerene or the like).
申请公布号 JPH11263916(A) 申请公布日期 1999.09.28
申请号 JP19980067287 申请日期 1998.03.17
申请人 FUJITSU LTD 发明人 MATSUURA AZUMA;HAYANO TOMOAKI;SATO HIROYUKI;YOKOUCHI KISHIO;FUKUYAMA SHUNICHI;NAKADA YOSHIHIRO
分类号 H01L21/768;C08K9/04;C08L79/04;C08L83/00;C08L101/00;H01L21/314;H01L23/522;H05K1/00;H05K1/03;(IPC1-7):C08L101/00 主分类号 H01L21/768
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