| 摘要 |
The present invention provides an insulating film formed on a surface of a substrate and made of a material containing oxygen, wherein a charge correction is carried out at a 1s peak position of a carbon adsorbed on a surface of the insulating film, and relative amounts between first to fourth peaks obtained when an oxygen 1s peak of the insulating film is decomposed by a same half width of 1.208 eV into a first peak at the oxygen 1s peak site obtained from an alpha -quartz crystal charge corrected similarly, and second to fourth peaks at positions of +0.87 eV, -0.35 eV and -0.83 eV, respectively from the oxygen 1s peak position, have relationship of that the third peak is higher than the second and fourth peaks, and the first peak is higher than the third peak, when a portion about 1 nm thick from the surface of the substrate of the insulating film is analyzed by a photoelectronic spectral method for an photoelectron extracting angle of 15 DEG or less.
|
