发明名称 |
Method of making a dielectric for an integrated circuit |
摘要 |
A composite 3-layer gate dielectric is disclosed. The upper and lower layers have a concentration of nitrogen atoms, while the middle layer has very few nitrogen atoms. The presence of the nitrogen atoms in the top sublayers provides resistance to boron diffusion from the top conductive layer and plasma damage during polysilicon gate stack formation and the presence of nitrogen in the bottom sublayer near the silicon-dielectric interface improves wearout, endurance, resistance to current stress and electron traps.
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申请公布号 |
US5960302(A) |
申请公布日期 |
1999.09.28 |
申请号 |
US19960775790 |
申请日期 |
1996.12.31 |
申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
MA, YI;ROY, PRADIP KUMAR;WU, KEVIN YUN-KANG |
分类号 |
H01L21/28;H01L29/51;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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