发明名称 Magnetic detecting element having beta-values selected for free magnetic layer and pinned magnetic layer
摘要 The present invention provides a spin valve magnetic detecting element having large DeltaR. The positive or negative sign of the beta value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is defined so that the resistance values for spin-up conduction electrons are smaller than the resistance values for spin-down conduction electrons in all magnetic layers when magnetization of a free magnetic layer is changed to minimize the resistance value. In this case, the change DeltaR in resistance of the magnetic detecting element can be increased.
申请公布号 US6806804(B2) 申请公布日期 2004.10.19
申请号 US20030641538 申请日期 2003.08.14
申请人 ALPS ELECTRONICS CO., LTD. 发明人 SAITO MASAMICHI;IDE YOSUKE;HASEGAWA NAOYA
分类号 G01R33/09;G11B5/39;H01F10/16;H01F10/32;H01L43/08;(IPC1-7):H01F5/00 主分类号 G01R33/09
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