| 摘要 |
A plate used for fabricating metal bumps is made from a silicon having a <110> crystallographic plane. The plate has a flat surface arranged at an angle relative to the <110> crystallographic plane, and cavities are formed in the flat surface by anisotropic etching. Each of the cavities has a rhombic opening and two oblique bottom surfaces defining a deepest portion. The deepest portion is shorter than the diagonal line of the rhombus and positioned in the cavity near one end thereof. In the method for fabricating metal balls, the cavities are filled with a paste containing metal particles, and heated to form metal balls in the cavities. The metal balls are then transferred from the plate to an electronic device.
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