发明名称
摘要 A process for the minute processing of diamonds which comprises preparing a substrate; forming a first buffer layer on the substrate; forming a second buffer layer, having a higher charge transfer rate than both the substrate and the first buffer layer, on the first layer; selectively removing the first and second buffer layers to selectively expose the surface of the substrate; depositing diamonds on the whole surface of the exposed surface of the substrate and the remaining first and second buffer layer; and removing the by-products formed on the surface of the second buffer layer and surface thereof.
申请公布号 JP2952575(B2) 申请公布日期 1999.09.27
申请号 JP19960316869 申请日期 1996.11.14
申请人 ERU JII SEMIKON CO LTD 发明人 HYON PIRU NO
分类号 C30B29/04;C04B41/45;C23C16/04;C23C16/26;C23C16/27;H01L21/48;H01L23/373;(IPC1-7):C30B29/04 主分类号 C30B29/04
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