| 摘要 |
FIELD: microelectronics. ^ SUBSTANCE: proposed method meant for manufacturing microwave devices, such as high-power transit-time generator diodes, Gunn-effect diodes, and the like involves following procedures: upon thinning semiconductor wafer substrate on deposited metal side windows are opened on active structure side to expose metal contacts, their surface area and active-junction working area configuration within preset frequency band being equal. Upper contact is etched on substrate end coaxial to open windows. Then auxiliary mesa structure having diameter greater than that of lower window is etched on substrate end coaxial to upper contact down to lower deposited metal. Working mesa structures are etched on active structure end in open window over mask of contacts remained within this window. In the process auxiliary annular mesa structure is formed around working mesa structures and connected to the latter by common residual substrate layer. Upon separation of chips obtained auxiliary mesa structure accommodating working mesa structures is installed on heat sink, whereupon auxiliary mesa structure is removed. ^ EFFECT: enlarged periphery of microwave diode active structure running to heat sink, reduced thermal resistance, enhanced power output. ^ 2 cl, 6 dwg |
