| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to efficiently execute the formation of contact holes in multilayered insulating films consisting of silicon oxide films and silicon nitride films by a single etching treatment in a process for producing an array substrate for display devices. SOLUTION: The etching for forming the contact holes (163, 164, 165, 166) (153, 154, 155, 156) (129a) is executed by an etching chemical of a hydrogen fluoride system. In such a case, the silicon nitride films constituting an interlayer insulating films (127) and a second insulating films (117) in particular are so formed that the density attains <=2.6 g/cm<2> and the weight components ratio of nitrogen/silicon attains >=1.3.</p> |
