METHOD FOR REDUCING DIFFUSION DISCHARGE IN INTEGRATED CIRCUIT AND CAPACITOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the diffusion discharge of contaminant and the diffusion of silicon in a piled capacitor, by forming a first oxide layer on a silicon plug, nitrating the first oxide layer, and etching the nitrated first oxide layer for forming a first barrier film. SOLUTION: A polysilicon plug 210 is formed of the various layers of polysilicon which is doped or not doped. A barrier layer 222 is formed on the polysilicon plug 210. Silicon dioxide layers 212 are arranged around the polysilicon plug 210. A base electrode 216 is arranged on the polysilicon plug 210. An adhesion layer 214 partially covers the silicon dioxide layers 212. Thus, the diffusion of dopant can be reduced.