发明名称 Electron beam exposure apparatus and electron beam measurement module
摘要 An electron beam exposure apparatus for exposing wafer by using an electron beam includes: an electron beam generator for generating the electron beam; a wafer stage for holding the wafer to be exposed; a current detector, provided on the wafer stage, for detecting a current of the electron beam; and a storage unit, provided on the wafer stage, for storing information indicating the current detected by the current detector.
申请公布号 US7034321(B2) 申请公布日期 2006.04.25
申请号 US20030624423 申请日期 2003.07.21
申请人 CANON KABUSHIKI KAISHA 发明人 TAKAKUWA MASAKI;NAKAYAMA YOSHINORI;NAKAMURA GEN
分类号 G03F7/20;H01J37/304;G01R29/24;H01J37/04;H01J37/18;H01J37/244;H01J37/305;H01J37/317;H01L21/027 主分类号 G03F7/20
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