| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the decrease in yield in the array substrate formation without allowing Al to be etched with an etching gas by dry etching by lamination of Al alloy and Mo films. SOLUTION: This array substrate has a thin-film transistor(TFT) which includes a scanning line 111, first insulating films 115, 117, a semiconductor film 120 and a source electrode 126b and drain electrode 126a connected to this semiconductor film 120, a signal line which is lead out of the drain electrode 126a and intersects approximately orthogonally with the scanning line 111 and a pixel electrode 131 which is electrically connected to the source electrode 126b. The scanning line 111 is deposited by laminating the Al-Nd alloy film 1110 at a film thickness 300 nm and the Mo film 1111 thereon at a film thickness 50 nm. Next, the first insulating films 115, 117 are formed by a CVD method at a substrate temp. of 350 deg.C. Further, the pixel electrode 131 is manufactured by dry etching.</p> |
