HIGH VOLTAGE DRIVING CIRCUIT FOR DECODING CIRCUIT IN MULTILEVEL NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING SELECTED WORD LINE OF NONVOLATILE MEMORY

摘要

PROBLEM TO BE SOLVED: To alleviate a total load by providing a second and a third field effect transistors having the conductivity types same as or opposite to the first field effect transistor, providing a body connecting terminal to the first terminal thereof and then connecting the first terminal of the first transistor to the bias of the memory device. SOLUTION: A row driver includes a source terminal connected to a first drive voltage VBODY, a gate terminal connected to a bias voltage generator G1, a drain terminal connected to an input terminal IN of row driver and a PMOS transistor M1 having the body terminal connected to the source terminal. The row driver also includes a phase inverter I coupled between the input terminal IN and output terminal OUT. M1 is 'on' or 'off' depending on the voltage impressed to the node G1 in regard to the selected word line and M2 bomes 'on' while M3 becomes 'off' in the triode area.