发明名称 SEMICONDUCTOR MANUFACTURE DEVICE
摘要 PROBLEM TO BE SOLVED: To buffer an electric charge which is charged on a wafer, by equipping pin material which supports the wafer with conductive material by a CVD device using a high frequency to contact the conductive pin with the wafer when the wafer and an electrode are separated. SOLUTION: Ceramic lift pins 8 are firmly fixed with a lift hoop 4 by screws 5, and the lift hoop 4 is fixed with a wafer lift bellows 6 by screws 7. These lift pins 8 are inserted into four holes of a lower electrode during wafer transfer and make the wafer move up and down by vertically moving up and down. When the wafer is lifted from the lower electrode, electric charge which is charged on the wafer is buffered by contacting with the conductive pins, and stable transfer can be made by the material of the lift pins 8 being conductive material having a specific resistance of about 10<-5> to 10<-10>Ω.cm and by more than one conductive lift pin contacting during the wafer transfer.
申请公布号 JPH11260727(A) 申请公布日期 1999.09.24
申请号 JP19980059985 申请日期 1998.03.11
申请人 SEIKO EPSON CORP 发明人 OTAKI HIDEO
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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