发明名称 MANUFACTURE OF THIN-FILM PIEZOELECTRIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To prevent performance as the thin-film piezoelectric element from being degraded owing to the generation of unnecessary spurious components in the mode of an unnecessary elastic wave generated depending upon a structure having a piezoelectric thin film formed on a substrate. SOLUTION: This piezoelectric element is equipped with the piezoelectric thin film 3 formed on the substrate 1, an upper electrode 4 which is formed in a reed-screen shape on one surface of the piezoelectric thin film 3 and has a positive and a negative electrode, and a lower electrode 10 which is formed on the other surface of the piezoelectric thin film 3. This manufacturing method includes 1st process wherein heating up to specific temperature is carried out while a specific DC voltage is applied between the upper electrode 4 and lower electrode 10 so that the positive and negative electrodes of the upper electrode 4 are held at the same potential and a 2nd process wherein heating up to a given temperature is carried out while a specific DC voltage is applied between the positive and negative electrodes. Consequently, unnecessary spurious components are reduced to obtain excellent characteristics.
申请公布号 JPH11261357(A) 申请公布日期 1999.09.24
申请号 JP19980059898 申请日期 1998.03.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 MISU KOICHIRO;NAGATSUKA TSUTOMU;WAKOU SHIYUUZOU
分类号 H01L41/09;H01L41/22;H01L41/257;H01L41/29;H03H3/02 主分类号 H01L41/09
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