| 发明名称 |
Semiconductor Device |
| 摘要 |
The semiconductor device includes a bit line, a word line intersecting the bit line, a plurality of first contact patterns, and a plurality of second contact patterns. The word line extends so as to intersect the bit line in plan view. Each of the first contact patterns is elongated in the direction in which the bit line extends in plan view. Each of the second contact patterns is elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view. The first contact patterns and the second contact patterns are formed in the same layer over the main surface of a semiconductor substrate. |
| 申请公布号 |
US2015076612(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414462376 |
申请日期 |
2014.08.18 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
MAKI Yukio |
| 分类号 |
H01L27/11;H01L23/538 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a main surface; a bit line extending over the main surface; a word line extending over the main surface so as to intersect the bit line in plan view; a plurality of first contact patterns including at least one of a contact pattern elongated in a direction in which the bit line extends, and a contact pattern elongated in a direction in which the word line extends in plan view; and a plurality of second contact patterns each elongated in directions inclined with respect to the respective directions in which the bit line and the word line extend in plan view, wherein the first contact patterns and the second contact patterns are formed in the same layer over the main surface. |
| 地址 |
Kawasaki-shi, JP |
