| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser element having a low threshold current and low operating voltage, and manufactureing method thereof. SOLUTION: The long-wavelength surface emitting laser 10 comprises an n-GaAs substrate 21, a DBR mirror 22, a light-emitting region of an embedded structure, a p-InGaAs contact layer 19, a p-side electrode 24, and a dielectric multilayer film mirror 27 with a window 25 embedded formed in this order and an n-side electrode 26 formed on the back side of the GaAs substrate 21. The DBR mirror 22 is a multilayer film of 28 cycles of n-GaAs/n-AlAs layers. The light-emitting region of the embedded structure comprises of an n-InP clad layer 13, a columnar mesa structure of a diameter of 10μm, composed of a strained quantum well active layer 14 and a p-InP clad layer 15, an embedded layer composed of a p-InP layer 16 in which the columnar mesa structure is embedded and an n-InP layer 17, and a p-InP clad layer 18 of 0.8μm thickness, formed on the mesa structure and an embedded layer.
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