High speed, low power dissipation bipolar transistor with a self-aligned epitaxial base is produced

摘要

A bipolar transistor with a self-aligned epitaxial base is produced using a sacrificial emitter core (222) and a spacer ring (225-1) to block dopant implantation into an emitter region during base conversion from intrinsic to extrinsic type. Production of a bipolar transistor with a self-aligned epitaxial base in a substrate structure, having a collector region (202-1) and several insulation structures (204), comprises: (1) successively forming, above the collector region, an intrinsic base region (205) of epitaxial semiconductor material, a sacrificial emitter core (222) and a conformal spacer material layer (225); (2) anisotropically etching the spacer material layer to form a protective spacer ring (225-1); (3) implanting a dopant into the epitaxial base region (205) to form an extrinsic base region, the sacrificial emitter core and the spacer ring blocking the dopant from an emitter region; (4) removing the sacrificial emitter core and the spacer ring; and (5) doping the emitter region. An Independent claim is also included for a semiconductor device including a bipolar transistor with a self-aligned epitaxial base produced by the above process.