发明名称 PROCESSING APPARATUS
摘要 <p>A process apparatus is provided to prevent a chamber from being corroded by plasma or cleaning gas by forming a spray layer on the inner wall of the chamber wherein the spray layer is composed of Al2O3 and Y2O3 in the Al2O3/Y2O3 ratio of 0.5 or higher. A processed article is received in a process receptacle. A process unit performs a plasma treatment on the processed article in the process receptacle. A layer is formed on the surface of a base material exposed to plasma in the process receptacle by a spray method, including an element compound belonging to a 3a-group of the periodic table wherein the element compound has anti-corrosion so that the reduction quantity by the plasma is smaller than the reduction quantity of an alumina member. The layer including the element compound belonging to the 3a-group of the periodic table can be substantially made of a Y2O3 layer.</p>
申请公布号 KR20070089772(A) 申请公布日期 2007.09.03
申请号 KR20070081254 申请日期 2007.08.13
申请人 TOKYO ELECTRON LIMITED 发明人 OTSUKI HAYASHI
分类号 B01J19/00;H01L21/205;B01J19/08;C23C4/10;C23C16/44;C23C16/455;C23C16/507;C23C16/509;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31 主分类号 B01J19/00
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