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经营范围
发明名称
High voltage MOSFET structure
摘要
申请公布号
EP0915521(A3)
申请公布日期
1999.09.22
申请号
EP19980120973
申请日期
1998.11.05
申请人
HARRIS CORPORATION
发明人
NEILSON, JOHN
分类号
H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/78;H01L21/336
主分类号
H01L29/06
代理机构
代理人
主权项
地址
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