| 摘要 |
<p>A CCD image sensor comprising: a) a linear array of individual imaging photodetecting cells aligned along a scanning line for sensing light information applied thereon and converting the light information to charge carriers; b) a CCD shift register adjacent to the linear array of photodetecting cells for receiving and temporarily storing the charge carriers generated by the photodetecting cells of the linear array, the CCD shift register having a plurality of CCD cells, each of the photodetecting cells being associated with at least two CCD cells: i) an imaging CCD cell for receiving the charge carriers from the associated photodetecting cell, and ii) at least one buffer cell for receiving a pre-loaded signal to reduce charge transfer inefficiency of the charge carriers; c) means for injecting the pre-loaded signal into the buffer cells of the CCD shift register; and d) means connected to the CCD cells for clocking out the CCD cells, each of the CCD cells having a first gate electrode and a second gate electrode, all of the first gate electrodes of the CCD shift register being connected to a first clock phase, all of the second gate electrodes of the CCD shift register being connected to a second clock phase. <MATH></p> |
