发明名称 |
SURFACE PROCESSING OF THIN-FILM CVD DIAMOND FILM FOR IMPROVED RESISTANCE AND INTEGRATED CIRCUIT PACKAGE HAVING PROCESSED FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a reliable method for increasing the resistance of a thin- film CVD diamond film coating a substrate. SOLUTION: A composite of thin-film diamond film 110 and a substrate 108 is treated in an apparatus for low-temperature plasma processing with an oxidizing gaseous element. During the treatment, the oxidizing plasma is reacted with a graphitic surface carbon to produce a volatile surface molecule, which is then sucked out of the diamond. The oxygen in the plasma is bound to the diamondlike carbon to stop the thin-film diamond film 110. An IC chip 102 and leads 106 are provided on the treated composite (thermally conductive and electrically resistant) as a base and the IC chip 102 and the leads 106 are connected with wires 116. Thereby, the leads 106 provide direct thermal dispersing conducting passages. |
申请公布号 |
JPH11255598(A) |
申请公布日期 |
1999.09.21 |
申请号 |
JP19990006158 |
申请日期 |
1999.01.13 |
申请人 |
SAINT GOBAN IND CERAMICS INC |
发明人 |
FABIS PHILIP M |
分类号 |
C30B29/04;C23C16/27;C23C16/56;H01L23/373;H01L23/433 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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