发明名称 SURFACE PROCESSING OF THIN-FILM CVD DIAMOND FILM FOR IMPROVED RESISTANCE AND INTEGRATED CIRCUIT PACKAGE HAVING PROCESSED FILM
摘要 PROBLEM TO BE SOLVED: To provide a reliable method for increasing the resistance of a thin- film CVD diamond film coating a substrate. SOLUTION: A composite of thin-film diamond film 110 and a substrate 108 is treated in an apparatus for low-temperature plasma processing with an oxidizing gaseous element. During the treatment, the oxidizing plasma is reacted with a graphitic surface carbon to produce a volatile surface molecule, which is then sucked out of the diamond. The oxygen in the plasma is bound to the diamondlike carbon to stop the thin-film diamond film 110. An IC chip 102 and leads 106 are provided on the treated composite (thermally conductive and electrically resistant) as a base and the IC chip 102 and the leads 106 are connected with wires 116. Thereby, the leads 106 provide direct thermal dispersing conducting passages.
申请公布号 JPH11255598(A) 申请公布日期 1999.09.21
申请号 JP19990006158 申请日期 1999.01.13
申请人 SAINT GOBAN IND CERAMICS INC 发明人 FABIS PHILIP M
分类号 C30B29/04;C23C16/27;C23C16/56;H01L23/373;H01L23/433 主分类号 C30B29/04
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