| 摘要 |
A method for fabricating a semiconductor device includes preparing a substrate comprising a first surface and a second surface formed at a lower position than the first surface, forming an insulation layer over the substrate, etching the insulation layer to form a first contact hole exposing the first surface and a second contact hole having a larger depth than the first contact hole above the second surface, forming a first sacrificial layer over the insulation layer, the first contact hole, and the second contact hole, forming a second sacrificial layer over the substrate structure and filled in the first contact hole, exposing the first sacrificial layer at a bottom surface of the second contact hole while having the second sacrificial layer remain in the first contact hole, etching the first sacrificial layer, and etching the remaining insulation layer to expose the second surface.
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